报告题目: Growth of high-quality Si ingots for solar cells using the noncontact crucible method
报告人: Kazuo Nakajima
报告时间: 2018年10月22日下午2点（第三讲）
报告地点: 浙江大学玉泉校区硅材料国家重点实验室1号楼104会议室
邀请人: 杨德仁院士
报告摘要:
1.ConceptoftheHPcastmethod
2.Conceptofthemono-likecastmethod
3.TriggerforthedevelopmentoftheNOCmethod
4.GrowthofSiingotsusingSi3N4coatedcruciblesbytheNOCmethod
5.RelationshipbetweenΔTandthelow-temperatureregion
6.GrowthofSisingleingotsusingtheNOCmethod
7.DislocationsinSisingleingotsgrownbytheNOCmethod
8.ImpuritiesinSisingleingotsgrownbytheNOCmethod
9.PerformanceofsolarcellspreparedbytheNOCmethod
